If you want to understand how chips are designed or how semiconductor devices are made, this programme offers two connected routes into the subject.
Study with Universitat Politècnica de Catalunya.
Elementele esențiale ale cursului
- Instituție
- Universitatea Politehnica din Catalonia (UPC)
- Țara
- Spania
- Subiect
- Inginerie
- Nivelul de studiu
- Gradul de master
- Predarea limbilor străine
- Engleză
- Formatul studiului
- În campus
- Campus
- ETSETB Barcelona, Spain; interuniversity programme with UB, UAB and URV
- Durată
- 1 an academic
- Credite
- 60 ECTS
- Taxă de școlarizare
- The official page lists approximately €1,162 for the programme, or €2,700 for non-EU residents, excluding non-teaching fees and the degree certificate. It does not label the fee's academic year; confirm your category and current quote with UPC.
- Ingnădire
- September; the official page currently says pre-enrolment is closed.
Information reviewed: 2026-10-27
Învățare și experiență
English-taught specialisations cover semiconductor engineering and microelectronic design. The curriculum includes device or circuit study, industry and research seminars, and a 10-credit thesis. Four universities participate with collaboration from IMB-CNM.
Who it may suit
The course can help you explore circuit design, semiconductor technologies or further research. Choosing between device manufacturing and circuit design is an important part of making the degree fit your interests.
Applying and costs
Use UPC’s master’s admission requirements and the programme team to assess your previous technical studies. Check the specialisation’s preparation requirements before selecting your route.
The official page lists approximately €1,162 for the programme, or €2,700 for non-EU residents, excluding non-teaching fees and the degree certificate. It does not label the fee’s academic year; confirm your category and current quote with UPC.
Al nostru Ghid de studiu pentru Spania covers the wider move and living-cost planning.
Sources: official programme page. Reviewed 27 October 2026.